 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| April 2001 SI3446DV Single N-Channel, 2.5V Specified PowerTrench(R) MOSFET General Description This N-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages. Features * 6.2 A, 20 V. RDS(on) = 0.024 @ VGS = 4.5 V RDS(on) = 0.032 @ VGS = 2.5 V * * * * Fast switching speed. Low gate charge (10.5nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications * * * DC/DC converter Load switch Battery Protection D D S 1 6 2 5 SuperSOT TM -6 D D G 3 4 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, T stg Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current - Continuous - Pulsed TA = 25C unless otherwise noted Parameter SI3446DV 20 12 (Note 1a) V V A W C 6.2 20 1.6 0.8 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 C/W C/W Package Outlines and Ordering Information Device Marking .637 Device FDC637AN Reel Size 7'' Tape Width 8mm Quantity 3000 units 2001 Fairchild Semiconductor Corporation SI3446DV Rev. A1 FDC637AN Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = 250 A ID = 250A, Referenced to 25C VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward 20 14 1 100 -100 V mV/C A nA nA Gate-Body Leakage Current, Reverse VGS = -12 V, VDS = 0 V (Note 2) On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID =250A,Referenced to 125C VGS = 4.5 V,ID = 6.2 A VGS = 4.5 V,ID = 6.2 A,TJ=125C VGS = 2.5 V, ID = 5.2 A VGS = 4.5 V, VDS = 5 V VDS = 5 V, ID = 6.2 A 0.4 0.82 -3 0.019 0.028 0.025 1.5 V mV/C 0.024 0.041 0.032 ID(on) gFS 10 7.4 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 10 V, VGS = 0 V, f = 1.0 MHz 1125 290 145 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 9 13 26 11 18 24 42 20 16 ns ns ns ns nC nC nC VDS = 5 V, ID = 6.2 A, VGS = 4.5 V 10.5 1.5 2.2 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 1.3 0.7 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78 C/W when mounted on a 1.0 in2 pad of 2 oz. copper. b) 156 C/W when mounted on a minimum pad of 2 oz.copper. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% SI3446DV Rev. A1 FDC637AN Typical Characteristics 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5 VGS= 4.5V ID, DRAIN CURRENT (A) 16 3.0V 2.5V 2.0V 2 12 1.5 VGS= 2.0V 2.5V 3.0V 8 1 4.5V 4 1.5V 0 0 0.4 0.8 1.2 1.6 2 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.5 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 0.08 RDS(ON), ON RESISTANCE (OHM) ID= 6.2A VGS= 4.5V ID= 6.2A 0.06 0.04 TJ= 125 C 25 C 0.02 o o 0 -25 0 25 50 75 100 o 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 VDS= 5V ID, DRAIN CURRENT (A) 15 25 C o 100 125 C o IS, REVERSE DRAIN CURRENT (A) TJ= -55 C o VGS = 0 10 1 0.1 0.01 0.001 0.0001 TJ= 125 C 25 C -55 C o o o 10 5 0 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. SI3446DV Rev. A1 FDC637AN Typical Characteristics (continued) 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.2A 4 CAPACITANCE (pF) VDS = 5V 10V 15V 1800 1500 1200 900 600 300 0 0 2 4 6 8 10 12 14 0 5 10 15 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Coss Crss f = 1MHz VGS = 0V 3 Ciss 2 1 0 Figure 7. Gate-Charge Characteristics Figure 8. Capacitance Characteristics 100 5 100s 1ms 10ms 100ms 1s DC VGS= 4.5V SINGLE PULSE RJA= 156 C/W TA= 25 C o o ID, DRAIN CURRENT (A) RDS(ON) LIMIT 10 SINGLE PULSE o RJA = 156 C/W 4 TA = 25 C o POWER (W) 3 1 2 0.1 1 0.01 0.1 1 10 100 0 0.1 1 10 SINGLE PULSE TIME (SEC) 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * R JA R JA = 156C/W t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.00001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. SI3446DV Rev. A1 FDC637AN TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1 |
Price & Availability of SI3446DV
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |